Cypress Semiconductor STK16C88 Manuale Utente Pagina 49

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12.02.07
49
Simtek Confidential
SONOS Technology
+10V to +12V
-10V to -12V
Use Difference in VT (or
VT) to Represent Binary Data States
Operation of a SONOS device
PROGRAM (positive voltage on gate)
Electrons tunnel from substrate to trapping layer
Electrons are trapped
→ VT increases
ERASE (negative voltage on gate)
Holes tunnel from substrate to trapping layer
Holes recombine with trapped electrons
→ VT decreases
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